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SI1917EDH-T1-E3
SI1917EDH-T1-E3
MOSFETs SI1917EDH-T1-E3
Vishay
SI1917EDH-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Standard Package NameSOT
Typical Fall Time (ns)1000
Typical Rise Time (ns)470
Number of Elements per Chip2
Maximum Power Dissipation (mW)730
Typical Gate Charge @ Vgs (nC)1.3@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)170
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)960
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1
Maximum Drain Source Resistance (mOhm)370@4.5V
Description
Trans MOSFET P-CH 12V 1A 6-Pin SC-70 T/R
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