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SI1967DH-T1-E3
SI1967DH-T1-E3
MOSFETs SI1967DH-T1-E3
Vishay
SI1967DH-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)10
Typical Rise Time (ns)27
Number of Elements per Chip2
Maximum Power Dissipation (mW)740
Typical Gate Charge @ Vgs (nC)2.6@8V|1.6@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)26
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.8
Typical Turn-Off Delay Time (ns)15
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)0.33
Maximum Gate Threshold Voltage (V)1
Minimum Gate Threshold Voltage (V)0.4
Typical Gate to Source Charge (nC)0.36
Typical Reverse Recovery Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.3
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)110@10V
Typical Reverse Recovery Charge (nC)15
Maximum Drain Source Resistance (mOhm)490@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)3
Maximum Power Dissipation on PCB @ TC=25°C (W)0.74
Typical Reverse Transfer Capacitance @ Vds (pF)16@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)220
Description
Trans MOSFET P-CH 20V 1.3A 6-Pin SC-70 T/R
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