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SI2318DS-T1-GE3
SI2318DS-T1-GE3
MOSFETs SI2318DS-T1-GE3
Vishay
SI2318DS-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)15
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)10@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)540@20V
Maximum Drain Source Resistance (MOhm)45@10V
Description
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23
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