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SI2333DS
SI2333DS
MOSFETs SI2333DS
Vishay
SI2333DS
--
Diodes, Transistors and Thyristors
MOSFETs
SI2333DS.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)60
Typical Rise Time (ns)45
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)11.5@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)72
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Typical Input Capacitance @ Vds (pF)1100@6V
Maximum Drain Source Resistance (MOhm)48@4.5V
Description
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23
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