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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI3493BDV-T1-GE3
SI3493BDV-T1-GE3
MOSFETs SI3493BDV-T1-GE3
Vishay
SI3493BDV-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI3493BDV-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.65
Package Height1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageTSOP
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)84
Typical Rise Time (ns)72
Number of Elements per Chip1
Maximum Power Dissipation (mW)2080
Typical Gate Charge @ Vgs (nC)26.2@4.5V|29@5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)22
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)1805@10V
Maximum Drain Source Resistance (mOhm)27.5@4.5V
Description
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R
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