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SI4190ADY-T1-GE3
SI4190ADY-T1-GE3
MOSFETs SI4190ADY-T1-GE3
Vishay
SI4190ADY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)44.4
Typical Gate Charge @ Vgs (nC)44.4@10V|20.7@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)31
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18.4
Typical Input Capacitance @ Vds (pF)1970@50V
Maximum Drain Source Resistance (MOhm)8.8@10V
Description
Trans MOSFET N-CH 100V 18.4A 8-Pin SOIC N T/R
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