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SI4435DY
SI4435DY
MOSFETs SI4435DY
onsemi
SI4435DY
--
Diodes, Transistors and Thyristors
MOSFETs
SI4435DY.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyTMOS
Standard Package NameSOP
Typical Fall Time (ns)25
Typical Rise Time (ns)13.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)17@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)42
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.8
Typical Input Capacitance @ Vds (pF)1604@15V
Maximum Drain Source Resistance (MOhm)20@10V
Description
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
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