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SI4451DY-T1-E3
SI4451DY-T1-E3
MOSFETs SI4451DY-T1-E3
Vishay
SI4451DY-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)235
Typical Rise Time (ns)125
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ Vgs (nC)81@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)55
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)315
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Maximum Drain Source Resistance (mOhm)8.25@4.5V
Description
Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R
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