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MOSFETs SI4501BDY-T1-GE3
Vishay
SI4501BDY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Common Quad Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 8|10@N Channel|9|14@P Channel |
| Typical Rise Time (ns) | 11|55@N Channel|12|18@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2500@N Channel|2000@P Channel |
| Typical Gate Charge @ 10V (nC) | 16.5@N Channel |
| Typical Gate Charge @ Vgs (nC) | 16.5@10V|7.9@4.5V@N Channel|27.5@8V|16.5@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20@N Channel|±8@P Channel |
| Typical Turn-On Delay Time (ns) | 7|16@N Channel|6|22@P Channel |
| Maximum Drain Source Voltage (V) | 30@N Channel|8@P Channel |
| Typical Turn-Off Delay Time (ns) | 34@P Channel|35|15|22@N Channel |
| Maximum Gate Threshold Voltage (V) | 2@N Channel|0.9@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9@N Channel|6.4@P Channel |
| Typical Input Capacitance @ Vds (pF) | 805@15V@N Channel|1400@4V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 17@10V@N Channel|27@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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