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MOSFETs SI4561DY-T1-GE3
Vishay
SI4561DY-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 9|14@P Channel|10@N Channel |
| Typical Rise Time (ns) | 79@P Channel|15|17@N Channel|10 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 11.7@N Channel|38.5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 17@4.5V@P Channel|38.5@10V|5.3@4.5V@N Channel|11.7@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7|16@N Channel|11|49@P Channel |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 36|35@P Channel|16@N Channel|15 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.6 |
| Typical Input Capacitance @ Vds (pF) | 1555@20V@P Channel|640@20V@N Channel |
| Maximum Drain Source Resistance (mOhm) | 35@10V@P Channel|35.5@10V@N Channel |
| Description |
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