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SI4567DY-T1-E3
SI4567DY-T1-E3
MOSFETs SI4567DY-T1-E3
Vishay
SI4567DY-T1-E3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)10|25@P Channel|33@N Channel|27
Typical Rise Time (ns)93@P Channel|16|20|95@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1850@N Channel|1950@P Channel
Typical Gate Charge @ 10V (nC)8@N Channel|12@P Channel
Typical Gate Charge @ Vgs (nC)8@10V|3.7@4.5V@N Channel|12@10V|6@4.5V@P Channel
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)8|74@N Channel|23@P Channel|10
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)23|31@N Channel|19|30@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.6@P Channel|4.1@N Channel
Typical Input Capacitance @ Vds (pF)355@20V@N Channel|480@20V@P Channel
Maximum Drain Source Resistance (mOhm)60@10V@N Channel|85@10V@P Channel
Description
Trans MOSFET N/P-CH 40V 4.1A/3.6A 8-Pin SOIC N T/R
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