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SI4823DY-T1-E3
SI4823DY-T1-E3
MOSFETs SI4823DY-T1-E3
Vishay
SI4823DY-T1-E3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)10
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)1700
Typical Gate Charge @ 10V (nC)8
Typical Gate Charge @ Vgs (nC)8@10V|4@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.3
Typical Input Capacitance @ Vds (pF)330@10V
Maximum Drain Source Resistance (mOhm)108@4.5V
Description
Trans MOSFET P-CH 20V 3.3A 8-Pin SOIC N T/R
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