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SI4963DY-T1
SI4963DY-T1
MOSFETs SI4963DY-T1
Vishay
SI4963DY-T1
--
Diodes, Transistors and Thyristors
MOSFETs
SI4963DY-T1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)45
Typical Rise Time (ns)32
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)22@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)27
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)95
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.2
Maximum Drain Source Resistance (mOhm)33@4.5V
Description
Trans MOSFET P-CH 20V 6.2A 8-Pin SOIC N T/R
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