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SI4967DY-E3
SI4967DY-E3
MOSFETs SI4967DY-E3
Vishay
SI4967DY-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI4967DY-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)95
Typical Rise Time (ns)40
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)35
Typical Gate Charge @ Vgs (nC)35@10V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)210
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.5
Maximum Drain Source Resistance (mOhm)23@4.5V
Description
Trans MOSFET P-CH 12V 7.5A 8-Pin SOIC N
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