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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI5404BDC-T1-GE3
SI5404BDC-T1-GE3
MOSFETs SI5404BDC-T1-GE3
Vishay
SI5404BDC-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI5404BDC-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Drain
Package Width1.65
Package Height1.1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Process TechnologyTrenchFET
Standard Package NameChip FET
Typical Fall Time (ns)10
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)7@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.4
Maximum Drain Source Resistance (mOhm)28@4.5V
Description
Trans MOSFET N-CH 20V 5.4A 8-Pin Chip FET T/R
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