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MOSFETs SI5424DC-T1-E3
Vishay
SI5424DC-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Drain |
| Package Width | 1.65 |
| Package Height | 1.1(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | Chip FET |
| Standard Package Name | Chip FET |
| Typical Fall Time (ns) | 9|12 |
| Typical Rise Time (ns) | 38|75 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 21 |
| Typical Gate Charge @ Vgs (nC) | 11@4.5V|21@10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Output Capacitance (pF) | 230 |
| Typical Turn-On Delay Time (ns) | 17|10 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 26|22 |
| Typical Gate to Drain Charge (nC) | 4.2 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Typical Gate to Source Charge (nC) | 3.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Typical Input Capacitance @ Vds (pF) | 950@15V |
| Typical Reverse Recovery Charge (nC) | 11 |
| Maximum Drain Source Resistance (mOhm) | 24@10V |
| Description |
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