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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI6913DQ-T1-GE3
SI6913DQ-T1-GE3
MOSFETs SI6913DQ-T1-GE3
Vishay
SI6913DQ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI6913DQ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)80
Typical Rise Time (ns)80
Number of Elements per Chip2
Maximum Power Dissipation (mW)1140
Typical Gate Charge @ Vgs (nC)18.5@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)130
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.9
Maximum Drain Source Resistance (mOhm)21@4.5V
Description
Trans MOSFET P-CH 12V 4.9A 8-Pin TSSOP T/R
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