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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7123DN-T1-GE3
SI7123DN-T1-GE3
MOSFETs SI7123DN-T1-GE3
Vishay
SI7123DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7123DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Process TechnologyTrenchFET
Standard Package NamePowerPAK 1212
Typical Fall Time (ns)28
Typical Rise Time (ns)88
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)35.5@2.5V|57@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)82
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)3729@10V
Maximum Drain Source Resistance (mOhm)10.6@4.5V
Description
Trans MOSFET P-CH 20V 16A 8-Pin PowerPAK 1212 T/R
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