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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7236DP-T1-E3
SI7236DP-T1-E3
MOSFETs SI7236DP-T1-E3
Vishay
SI7236DP-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7236DP-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
Typical Fall Time (ns)22|10
Typical Rise Time (ns)15|100
Number of Elements per Chip2
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ 10V (nC)68
Typical Gate Charge @ Vgs (nC)68@10V|31@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)30|10
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)60|80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20.7
Typical Input Capacitance @ Vds (pF)4000@10V
Maximum Drain Source Resistance (mOhm)5.2@4.5V
Description
Trans MOSFET N-CH 20V 20.7A 8-Pin PowerPAK SO T/R
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