HTS | 8541.10.00.80 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 5.89 |
Package Height | 1.07(Max) |
Package Length | 4.9 |
Product Category | Power MOSFET |
Supplier Package | PowerPAK SO |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Typical Fall Time (ns) | 15 |
Typical Rise Time (ns) | 12 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 4200 |
Typical Gate Charge @ 10V (nC) | 12 |
Typical Gate Charge @ Vgs (nC) | 12@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 10 |
Maximum Drain Source Voltage (V) | 200 |
Typical Gate Plateau Voltage (V) | 4.5 |
Typical Turn-Off Delay Time (ns) | 15 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Gate to Drain Charge (nC) | 3.8 |
Maximum Gate Threshold Voltage (V) | 20|-20 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate Threshold Voltage (V) | 10|6 |
Typical Gate to Source Charge (nC) | 2.5 |
Typical Reverse Recovery Time (ns) | 60 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 1.8 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Drain Source Resistance (mOhm) | 240@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 8 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 4.2 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.8 (Ta) |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 70 |
Description | |