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SI7806ADN-T1-E3
SI7806ADN-T1-E3
MOSFETs SI7806ADN-T1-E3
Vishay
SI7806ADN-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Process TechnologyTrenchFET
Standard Package NamePowerPAK 1212
Typical Fall Time (ns)10
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ Vgs (nC)13.2@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)250
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)33
Typical Gate to Drain Charge (nC)4.3
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)5.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Maximum Drain Source Resistance (mOhm)11@10V
Description
Trans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 T/R
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