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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7846DP-T1-E3
SI7846DP-T1-E3
MOSFETs SI7846DP-T1-E3
Vishay
SI7846DP-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7846DP-T1-E3.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveUnknown
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
Typical Fall Time (ns)10
Typical Rise Time (ns)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ 10V (nC)30
Typical Gate Charge @ Vgs (nC)30@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (MOhm)50@10V
Description
Trans MOSFET N-CH 150V 4A Automotive 8-Pin PowerPAK SO T/R
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