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SI8401DB-T1-E1
SI8401DB-T1-E1
MOSFETs SI8401DB-T1-E1
Vishay
SI8401DB-T1-E1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeBall
PCB changed4
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width1.6(Max)
Package Height0.36(Max)
Package Length1.6(Max)
Product CategoryPower MOSFET
Supplier PackageMicro Foot
Standard Package NameBGA
Typical Fall Time (ns)60
Typical Rise Time (ns)28
Number of Elements per Chip1
Maximum Power Dissipation (mW)2770
Typical Gate Charge @ Vgs (nC)11@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)88
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.6
Maximum Drain Source Resistance (mOhm)65@4.5V
Description
Trans MOSFET P-CH Si 20V 3.6A 4-Pin Micro Foot T/R
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