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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI8851EDB-T2-E1
SI8851EDB-T2-E1
MOSFETs SI8851EDB-T2-E1
Vishay
SI8851EDB-T2-E1
--
Diodes, Transistors and Thyristors
MOSFETs
SI8851EDB-T2-E1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count30
AutomotiveNo
Lead ShapeBall
PCB changed30
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.96
Package Height0.21
Package Length2.36
Product CategoryPower MOSFET
Supplier PackagePower Micro Foot
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameBGA
Typical Fall Time (ns)35
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ Vgs (nC)70@4.5V|120@8V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)115
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16.7
Typical Input Capacitance @ Vds (pF)6900@10V
Maximum Drain Source Resistance (mOhm)8@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH 20V 16.7A 30-Pin Power Micro Foot T/R
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