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SIA411DJ-T1-GE3
SIA411DJ-T1-GE3
MOSFETs SIA411DJ-T1-GE3
Vishay
SIA411DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70 EP
Process TechnologyTrenchFET
Typical Fall Time (ns)100
Typical Rise Time (ns)65
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)25@8V|15@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)210
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)40
Typical Gate to Drain Charge (nC)4
Maximum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)1200@10V
Typical Reverse Recovery Charge (nC)10
Maximum Drain Source Resistance (MOhm)30@4.5V
Description
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R
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