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MOSFETs DMC3400SDW-13
Diodes Incorporated
DMC3400SDW-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 1.3 |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-363 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT-26 |
| Typical Fall Time (ns) | 19@P Channel|18.8@N Channel |
| Typical Rise Time (ns) | 3.5@N Channel|8.8@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 390 |
| Typical Gate Charge @ 10V (nC) | 1.4@N Channel|1.3@P Channel |
| Typical Gate Charge @ Vgs (nC) | 1.3@10V|0.6@4.5V@P Channel|0.6@4.5V@N Channel|1.4@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5.7@P Channel|3.8@N Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 35@P Channel|25.2@N Channel |
| Maximum Gate Threshold Voltage (V) | 1.6@N Channel|2.6@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.65@N Channel|0.45@P Channel |
| Typical Input Capacitance @ Vds (pF) | 55@15V@N Channel|54@15V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 400@10V@N Channel|900@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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