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SIA416DJ-T1-GE3
SIA416DJ-T1-GE3
MOSFETs SIA416DJ-T1-GE3
Vishay
SIA416DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)25
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ 10V (nC)6.5
Typical Gate Charge @ Vgs (nC)6.5@10V|3.5@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)15
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11.3
Typical Input Capacitance @ Vds (pF)295@50V
Maximum Drain Source Resistance (MOhm)83@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 11.3A 6-Pin PowerPAK SC-70 T/R
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