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SIA432DJ-T1-GE3
SIA432DJ-T1-GE3
MOSFETs SIA432DJ-T1-GE3
Vishay
SIA432DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70 EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)10
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V|5.6@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)115
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.7
Typical Turn-Off Delay Time (ns)15
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)1.4
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)2
Typical Reverse Recovery Time (ns)16
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)800@15V
Typical Reverse Recovery Charge (nC)8
Maximum Drain Source Resistance (mOhm)20@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)30
Maximum Power Dissipation on PCB @ TC=25°C (W)3.5
Typical Reverse Transfer Capacitance @ Vds (pF)54@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)10.1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)80
Description
Trans MOSFET N-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R
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