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SIA485DJ-T1-GE3
SIA485DJ-T1-GE3
MOSFETs SIA485DJ-T1-GE3
Vishay
SIA485DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70 EP
Process TechnologyTrenchFET
Typical Fall Time (ns)20
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)2900
Typical Gate Charge @ 10V (nC)4.2
Typical Gate Charge @ Vgs (nC)4.2@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)10
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.6
Typical Input Capacitance @ Vds (pF)155@75V
Maximum Drain Source Resistance (MOhm)2600@10V
Description
Trans MOSFET P-CH 150V 1.6A 6-Pin PowerPAK SC-70 EP T/R
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