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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA517DJ-T1-GE3
SIA517DJ-T1-GE3
MOSFETs SIA517DJ-T1-GE3
Vishay
SIA517DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA517DJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width2.05
Package Height0.75
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Process TechnologyTrenchFET
Typical Fall Time (ns)10@N Channel|20@P Channel
Typical Rise Time (ns)10@N Channel|25@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ Vgs (nC)9.7@8V|5.6@4.5V@N Channel|13.1@8V|8.2@4.5V@P Channel
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)10@N Channel|30@P Channel
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)22@N Channel|30@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Typical Input Capacitance @ Vds (pF)500@6V@N Channel|590@6V@P Channel
Maximum Drain Source Resistance (MOhm)29@4.5V@N Channel|61@4.5V@P Channel
Description
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R
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