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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA936EDJ-T1-GE3
SIA936EDJ-T1-GE3
MOSFETs SIA936EDJ-T1-GE3
Vishay
SIA936EDJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA936EDJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)10
Typical Rise Time (ns)32
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ 10V (nC)11.3
Typical Gate Charge @ Vgs (nC)11.3@10V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)1.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Maximum Drain Source Resistance (mOhm)34@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
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