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MOSFETs SIE822DF-T1-GE3
Vishay
SIE822DF-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 10 |
| Automotive | No |
| PCB changed | 10 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5.16 |
| Package Height | 0.8 |
| Package Length | 6.15 |
| Product Category | Power MOSFET |
| Supplier Package | PolarPAK |
| Typical Fall Time (ns) | 20|10 |
| Typical Rise Time (ns) | 220|25 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 5200 |
| Typical Gate Charge @ 10V (nC) | 52 |
| Typical Gate Charge @ Vgs (nC) | 52@10V|24@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 50|15 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -50 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 4200@10V |
| Maximum Drain Source Resistance (MOhm) | 3.4@10V |
| Description |
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