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SIHB11N80AE-GE3
SIHB11N80AE-GE3
MOSFETs SIHB11N80AE-GE3
Vishay
SIHB11N80AE-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Typical Fall Time (ns)27
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)78000
Typical Gate Charge @ 10V (nC)28
Typical Gate Charge @ Vgs (nC)28@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)25
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)804@100V
Maximum Drain Source Resistance (mOhm)450@10V
Maximum Gate Source Leakage Current (nA)50000
Description
Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) D2PAK
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