Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.65(Max) |
Package Height | 9.01(Max) |
Package Length | 10.51(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 25 |
Typical Fall Time (ns) | 36 |
Typical Rise Time (ns) | 51 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 3.6 |
Minimum Gate Resistance (Ohm) | 0.5 |
Maximum Power Dissipation (mW) | 125000 |
Typical Gate Charge @ 10V (nC) | 70(Max) |
Typical Gate Charge @ Vgs (nC) | 70(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 430 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 200 |
Typical Gate Plateau Voltage (V) | 6.5 |
Typical Turn-Off Delay Time (ns) | 45 |
Maximum Diode Forward Voltage (V) | 2 |
Typical Gate to Drain Charge (nC) | 39(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 13(Max) |
Typical Reverse Recovery Time (ns) | 300 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 18 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 1300@25V |
Typical Reverse Recovery Charge (nC) | 3400 |
Maximum Drain Source Resistance (mOhm) | 180@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 72 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 130@25V |
Description | |