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SIHF640-E3
SIHF640-E3
MOSFETs SIHF640-E3
Vishay
SIHF640-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHF640-E3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.65(Max)
Package Height9.01(Max)
Package Length10.51(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)25
Typical Fall Time (ns)36
Typical Rise Time (ns)51
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3.6
Minimum Gate Resistance (Ohm)0.5
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)70(Max)
Typical Gate Charge @ Vgs (nC)70(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)430
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)200
Typical Gate Plateau Voltage (V)6.5
Typical Turn-Off Delay Time (ns)45
Maximum Diode Forward Voltage (V)2
Typical Gate to Drain Charge (nC)39(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)13(Max)
Typical Reverse Recovery Time (ns)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1300@25V
Typical Reverse Recovery Charge (nC)3400
Maximum Drain Source Resistance (mOhm)180@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)72
Typical Reverse Transfer Capacitance @ Vds (pF)130@25V
Description
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB
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