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MOSFETs SIHF9Z34STRR-GE3
Vishay
SIHF9Z34STRR-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.41(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 100 |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 58 |
| Typical Rise Time (ns) | 120 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 3.9 |
| Minimum Gate Resistance (Ohm) | 0.7 |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Gate Charge @ 10V (nC) | 34(Max) |
| Typical Gate Charge @ Vgs (nC) | 34(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 620 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Typical Gate to Drain Charge (nC) | 16(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 9.9(Max) |
| Typical Reverse Recovery Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1100@25V |
| Typical Reverse Recovery Charge (nC) | 280 |
| Maximum Drain Source Resistance (mOhm) | 140@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 72 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 100@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Description |
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