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SIHFS9N60A-GE3
SIHFS9N60A-GE3
MOSFETs SIHFS9N60A-GE3
Vishay
SIHFS9N60A-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)22
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)170000
Typical Gate Charge @ 10V (nC)49(Max)
Typical Gate Charge @ Vgs (nC)49(Max)@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.2
Typical Input Capacitance @ Vds (pF)1400@25V
Maximum Drain Source Resistance (MOhm)750@10V
Description
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK
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