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SIHFU9220-GE3
SIHFU9220-GE3
MOSFETs SIHFU9220-GE3
Vishay
SIHFU9220-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageTO-251AA
Maximum IDSS (uA)100
Typical Fall Time (ns)19
Typical Rise Time (ns)27
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)20(Max)
Typical Gate Charge @ Vgs (nC)20(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.8
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)7.3
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.6
Typical Input Capacitance @ Vds (pF)340@25V
Maximum Drain Source Resistance (mOhm)1500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 200V 3.6A 3-Pin(3+Tab) TO-251AA
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