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SIHFZ14S-GE3
SIHFZ14S-GE3
MOSFETs SIHFZ14S-GE3
Vishay
SIHFZ14S-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHFZ14S-GE3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)19
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ 10V (nC)11(Max)
Typical Gate Charge @ Vgs (nC)11(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)300@25V
Maximum Drain Source Resistance (mOhm)200@10V
Description
Trans MOSFET N-CH Si 60V 10A 3-Pin(2+Tab) D2PAK
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