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SIHFZ48RS-GE3
SIHFZ48RS-GE3
MOSFETs SIHFZ48RS-GE3
Vishay
SIHFZ48RS-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)250
Typical Rise Time (ns)250
Number of Elements per Chip1
Maximum Power Dissipation (mW)190000
Typical Gate Charge @ 10V (nC)110(Max)
Typical Gate Charge @ Vgs (nC)110(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.1
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)210
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)2400@25V
Maximum Drain Source Resistance (mOhm)18@10V
Description
Trans MOSFET N-CH Si 60V 50A 3-Pin(2+Tab) D2PAK
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