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SIHL640S-E3
SIHL640S-E3
MOSFETs SIHL640S-E3
Vishay
SIHL640S-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHL640S-E3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)52
Typical Rise Time (ns)83
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ Vgs (nC)66(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)44
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Typical Input Capacitance @ Vds (pF)1800@25V
Maximum Drain Source Resistance (mOhm)180@5V
Description
Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK
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