Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 25 |
Typical Fall Time (ns) | 27 |
Typical Rise Time (ns) | 64 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ Vgs (nC) | 12(Max)@5V |
Maximum Gate Source Voltage (V) | ±10 |
Typical Turn-On Delay Time (ns) | 9.8 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 21 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 7.7 |
Typical Input Capacitance @ Vds (pF) | 490@25V |
Maximum Drain Source Resistance (mOhm) | 270@5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |