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SIHLU120-GE3
SIHLU120-GE3
MOSFETs SIHLU120-GE3
Vishay
SIHLU120-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHLU120-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)25
Typical Fall Time (ns)27
Typical Rise Time (ns)64
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)12(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)9.8
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)21
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.7
Typical Input Capacitance @ Vds (pF)490@25V
Maximum Drain Source Resistance (mOhm)270@5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 7.7A
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