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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIR120DP-T1-RE3
SIR120DP-T1-RE3
MOSFETs SIR120DP-T1-RE3
Vishay
SIR120DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIR120DP-T1-RE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Typical Fall Time (ns)8|10
Typical Rise Time (ns)8|12
Number of Elements per Chip1
Maximum Power Dissipation (mW)5400
Typical Gate Charge @ 10V (nC)62.5
Typical Gate Charge @ Vgs (nC)48.5@7.5V|62.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17|20
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)24.7
Typical Input Capacitance @ Vds (pF)4150@40V
Maximum Drain Source Resistance (MOhm)3.55@10V
Description
Trans MOSFET N-CH 80V 24.7A 8-Pin PowerPAK SO EP T/R
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