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MOSFETs IRHG567110SCS
Infineon
IRHG567110SCS
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Through Hole |
| ECCN (US) | Contact Export |
| Pin Count | 14 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 14 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Quad |
| Package Width | 7.74(Max) |
| Package Height | 3.3(Max) |
| Package Length | 19.3(Max) |
| Product Category | Power MOSFET |
| Supplier Package | CDIP |
| Maximum IDSS (uA) | 10 |
| Process Technology | R5 |
| Standard Package Name | DIP |
| Typical Fall Time (ns) | 15(Max)@N Channel|90(Max)@P Channel |
| Typical Rise Time (ns) | 17(Max)@P Channel|16(Max)@N Channel |
| Number of Elements per Chip | 4 |
| Maximum Power Dissipation (mW) | 1400 |
| Typical Gate Charge @ Vgs (nC) | 17(Max)@12V@N Channel|13.4(Max)@12V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 21(Max) |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.96@P Channel|1.6@N Channel |
| Typical Input Capacitance @ Vds (pF) | 370@25V |
| Maximum Drain Source Resistance (MOhm) | 960@12V@P Channel|290@12V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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