Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Process Technology | TrenchFET Gen V |
Typical Fall Time (ns) | 44|45 |
Typical Rise Time (ns) | 14|62 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 6250 |
Typical Gate Charge @ 10V (nC) | 30 |
Typical Gate Charge @ Vgs (nC) | 30@10V|22.4@7.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 15|17 |
Maximum Drain Source Voltage (V) | 150 |
Typical Turn-Off Delay Time (ns) | 20|22 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 17.2 |
Typical Input Capacitance @ Vds (pF) | 2540@75V |
Maximum Drain Source Resistance (mOhm) | 8.8@10V |
Description |