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STS8C6H3LL
STS8C6H3LL
MOSFETs STS8C6H3LL
STMicroelectronics
STS8C6H3LL
--
Diodes, Transistors and Thyristors
MOSFETs
STS8C6H3LL.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.65(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSO N
Maximum IDSS (uA)1
Process TechnologySTripFET
Standard Package NameSOP
Typical Fall Time (ns)2.8@N Channel|21@P Channel
Typical Rise Time (ns)15@P Channel|22@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2700
Typical Gate Charge @ Vgs (nC)4.6@4.5V@N Channel|26@4.5V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4@N Channel|15@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)13@N Channel|24@P Channel
Maximum Gate Threshold Voltage (V)1(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8@N Channel|6@P Channel
Typical Input Capacitance @ Vds (pF)475@24V@N Channel|1450@24V@P Channel
Maximum Drain Source Resistance (mOhm)21@10V@N Channel|30@10V@P Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 30V 8A/6A 8-Pin SO N T/R
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