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SIR5802DP
SIR5802DP
MOSFETs SIR5802DP
Vishay
SIR5802DP
--
Diodes, Transistors and Thyristors
MOSFETs
SIR5802DP.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)12|13
Typical Rise Time (ns)16|11
Number of Elements per Chip1
Maximum Power Dissipation (mW)6250
Typical Gate Charge @ 10V (nC)37.3
Typical Gate Charge @ Vgs (nC)37.3@10V|28@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)21|16
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)26|25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33.6
Typical Input Capacitance @ Vds (pF)3020@40V
Maximum Drain Source Resistance (mOhm)2.9@10V
Description
Trans MOSFET N-CH 80V 33.6A T/R
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