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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIR580DP-T1-RE3
SIR580DP-T1-RE3
MOSFETs SIR580DP-T1-RE3
Vishay
SIR580DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIR580DP-T1-RE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)10|8
Typical Rise Time (ns)8|10
Number of Elements per Chip1
Maximum Power Dissipation (mW)6250
Typical Gate Charge @ 10V (nC)50.6
Typical Gate Charge @ Vgs (nC)37.7@7.5V|50.6@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18|23
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)28|25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35.8
Typical Input Capacitance @ Vds (pF)4100@40V
Maximum Drain Source Resistance (MOhm)2.7@10V
Description
Trans MOSFET N-CH 80V 35.8A T/R
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