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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIR770DP-T1-GE3
SIR770DP-T1-GE3
MOSFETs SIR770DP-T1-GE3
Vishay
SIR770DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIR770DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
Typical Fall Time (ns)8
Typical Rise Time (ns)8|10
Number of Elements per Chip2
Maximum Power Dissipation (mW)3600
Typical Gate Charge @ 10V (nC)14
Typical Gate Charge @ Vgs (nC)6.6@4.5V|14@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14|10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)15|18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)900@15V
Maximum Drain Source Resistance (mOhm)21@10V
Description
Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R
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