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IPC218N04N3X7SA1
IPC218N04N3X7SA1
MOSFETs IPC218N04N3X7SA1
Infineon
IPC218N04N3X7SA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingFrame
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width3.7
Package Height0.18
Package Length5.9
Product CategoryPower MOSFET
Supplier PackageChip
Maximum IDSS (uA)2
Process TechnologyOptiMOS
Number of Elements per Chip1
Maximum Drain Source Voltage (V)40
Maximum Gate Threshold Voltage (V)4
Maximum Drain Source Resistance (MOhm)50@10V
Maximum Gate Source Leakage Current (nA)200
Description
Trans MOSFET N-CH 40V 3-Pin Chip Frame
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