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SIR882ADP-T1-GE3
SIR882ADP-T1-GE3
MOSFETs SIR882ADP-T1-GE3
Vishay
SIR882ADP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)9|10
Typical Rise Time (ns)12|14
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)1.9
Minimum Gate Resistance (Ohm)0.2
Maximum Power Dissipation (mW)5400
Typical Gate Charge @ 10V (nC)39.5
Typical Gate Charge @ Vgs (nC)39.5@10V|30.3@7.5V|19.5@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)748
Typical Turn-On Delay Time (ns)11|13
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)34|32
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.74
Maximum Gate Threshold Voltage (V)2.8
Typical Reverse Recovery Time (ns)49
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)60
Typical Input Capacitance @ Vds (pF)1975@50V
Maximum Drain Source Resistance (mOhm)8.7@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Power Dissipation on PCB @ TC=25°C (W)5.4
Maximum Continuous Drain Current on PCB @ TC=25°C (A)17.6
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)65
Description
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO EP T/R
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